(China (Mainland))
Product Summary
The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery of the RA30H1317M can be connected directly to the drain of the enhancement-mode MOSFET transistors.
Parametrics
RA30H1317M absolute maximum ratings: (1)VDD, Drain Voltage: 17 V; (2)VGG, Gate Voltage: 6 V; (3)Pin, Input Power: 100 mW; (4)Pout, Output Power: 45 W; (5)Tcase(OP), Operation Case Temperature Range: -30 to +110 ℃; (6)Tstg, Storage Temperature Range: -40 to +110 ℃.
Features
RA30H1317M features: (1)Enhancement-Mode MOSFET Transistors; (2)Pout＞30W, hT＞40% @ VDD=12.5V, VGG=5V, Pin=50mW; (3)Broadband Frequency Range: 135 to175MHz; (4)Low-Power Control Current IGG=1mA (typ) at VGG=5V; (5)Module Size: 66 × 21 × 9.88 mm; (6)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
Diagrams
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Pricing (USD) |
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 RA30H1317M |
Other |
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Data Sheet |
Negotiable |
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RA30H1317M1 |
Other |
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Data Sheet |
Negotiable |
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